SEMICONDUCTOR DEVICE
A semiconductor device is provided. The semiconductor device includes a first stacked structure including a plurality of first insulating patterns and a plurality of first semiconductor patterns alternately stacked on a substrate, the first stacked structure extending in a first direction parallel t...
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| creator | HONG, Jae Ho LEE, Kyung Hwan KIM, Hui-Jung KIM, Yong Seok HWANG, Yoo Sang YAMADA, Satoru PARK, Seok Han |
| description | A semiconductor device is provided. The semiconductor device includes a first stacked structure including a plurality of first insulating patterns and a plurality of first semiconductor patterns alternately stacked on a substrate, the first stacked structure extending in a first direction parallel to an upper surface of the substrate, a first conductive pattern on one side surface of the first stacked structure, the first conductive pattern extending in a second direction crossing the upper surface of the substrate, and a first ferroelectric layer between the first stacked structure and the first conductive pattern, the first ferroelectric layer extending in the second direction, wherein each of the first semiconductor patterns includes a first impurity region, a first channel region and a second impurity region which are sequentially arranged along the first direction. |
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The semiconductor device includes a first stacked structure including a plurality of first insulating patterns and a plurality of first semiconductor patterns alternately stacked on a substrate, the first stacked structure extending in a first direction parallel to an upper surface of the substrate, a first conductive pattern on one side surface of the first stacked structure, the first conductive pattern extending in a second direction crossing the upper surface of the substrate, and a first ferroelectric layer between the first stacked structure and the first conductive pattern, the first ferroelectric layer extending in the second direction, wherein each of the first semiconductor patterns includes a first impurity region, a first channel region and a second impurity region which are sequentially arranged along the first direction.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZBAJdvX1dPb3cwl1DvEPUnBxDfN0duVhYE1LzClO5YXS3AzKbq4hzh66qQX58anFBYnJqXmpJfGhwUYGRsYGhpYGpqaOhsbEqQIA-9gflA</recordid><startdate>20230119</startdate><enddate>20230119</enddate><creator>HONG, Jae Ho</creator><creator>LEE, Kyung Hwan</creator><creator>KIM, Hui-Jung</creator><creator>KIM, Yong Seok</creator><creator>HWANG, Yoo Sang</creator><creator>YAMADA, Satoru</creator><creator>PARK, Seok Han</creator><scope>EVB</scope></search><sort><creationdate>20230119</creationdate><title>SEMICONDUCTOR DEVICE</title><author>HONG, Jae Ho ; LEE, Kyung Hwan ; KIM, Hui-Jung ; KIM, Yong Seok ; HWANG, Yoo Sang ; YAMADA, Satoru ; PARK, Seok Han</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2023019055A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2023</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>HONG, Jae Ho</creatorcontrib><creatorcontrib>LEE, Kyung Hwan</creatorcontrib><creatorcontrib>KIM, Hui-Jung</creatorcontrib><creatorcontrib>KIM, Yong Seok</creatorcontrib><creatorcontrib>HWANG, Yoo Sang</creatorcontrib><creatorcontrib>YAMADA, Satoru</creatorcontrib><creatorcontrib>PARK, Seok Han</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>HONG, Jae Ho</au><au>LEE, Kyung Hwan</au><au>KIM, Hui-Jung</au><au>KIM, Yong Seok</au><au>HWANG, Yoo Sang</au><au>YAMADA, Satoru</au><au>PARK, Seok Han</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SEMICONDUCTOR DEVICE</title><date>2023-01-19</date><risdate>2023</risdate><abstract>A semiconductor device is provided. The semiconductor device includes a first stacked structure including a plurality of first insulating patterns and a plurality of first semiconductor patterns alternately stacked on a substrate, the first stacked structure extending in a first direction parallel to an upper surface of the substrate, a first conductive pattern on one side surface of the first stacked structure, the first conductive pattern extending in a second direction crossing the upper surface of the substrate, and a first ferroelectric layer between the first stacked structure and the first conductive pattern, the first ferroelectric layer extending in the second direction, wherein each of the first semiconductor patterns includes a first impurity region, a first channel region and a second impurity region which are sequentially arranged along the first direction.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | SEMICONDUCTOR DEVICE |
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