WELL RING FOR RESISTIVE GROUND POWER DOMAIN SEGREGATION

WELL RING FOR RESISTIVE GROUND POWER DOMAIN SEGREGATION

A variety of applications can include apparatus or methods that provide a well ring for resistive ground power domain segregation. The well ring can be implemented as a n-well in a p-type substrate. Resistive separation between ground domains can be generated by biasing a n-well ring to an external...

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Bibliographische Detailangaben
Hauptverfasser: Piccardi, Michele, Bhatt, Ishani, D'Alessandro, Andrea, Davis, James Eric, Vanguri, Phani Bharadwaj, Marr, Kenneth William, Irwin, Michael James, Xotta, Andrea Giovanni, Prozapas, Aleksey, Tuzi, Domenico, Conenna, Pasquale, Mikhalev, Vladimir, Wu, Chung-Ping, Pilolli, Luigi, Rori, Fulvio, Nam, Joonwoo, Cichocki, Mattia, Alilla, Alessandro, Marchese, Luigi, Moschiano, Violante, Siciliani, Umberto, Cerafogli, Chiara
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:A variety of applications can include apparatus or methods that provide a well ring for resistive ground power domain segregation. The well ring can be implemented as a n-well in a p-type substrate. Resistive separation between ground domains can be generated by biasing a n-well ring to an external supply voltage. This approach can provide a procedure, from a process standpoint, that provides relatively high flexibility to design for chip floor planning and simulation, while providing sufficient noise rejection between independent ground power domains when correctly sized. Significant noise rejection between ground power domains can be attained.