SOLID-STATE IMAGE SENSOR AND IMAGING SYSTEM
A solid-state image sensor includes a first semiconductor, and a second semiconductor having a composition different from that of the first composition and electrically connected to the first semiconductor. The first semiconductor includes a photodiode that converts light incident on the photodiode...
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Format: | Patent |
Sprache: | eng |
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Zusammenfassung: | A solid-state image sensor includes a first semiconductor, and a second semiconductor having a composition different from that of the first composition and electrically connected to the first semiconductor. The first semiconductor includes a photodiode that converts light incident on the photodiode into charge carriers, first carrier storages that store the charge carriers, and a transfer gate that controls transfer the charge carriers to a selected one of the first carrier storages. The second semiconductor includes second carrier storages and a potential detection node. The second carrier storages each store charge carriers based on the charge carriers stored in a corresponding one of the first carrier storages. The potential detection node detects the electric potential of each of the second carrier storages. The solid-state image sensor further includes a reset transistor that resets the electric potential of each of the first carrier storages to a predetermined electric potential. |
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