SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME

According to the present disclosure, hybrid fins positioned between two different epitaxial source/drain features are recessed to prevent conductive material from entering interior air gaps of the hybrid fins, thus, preventing short circuit between source/drain contacts and gate electrodes. Recessin...

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Bibliographische Detailangaben
Hauptverfasser: LIAW, Jhon Jhy, KANG, Hsiu-Yu, LIN, Chun-Jun, CHUANG, Hui-Chi, LU, Yu-Hsuan, LIN, Ta-Chun, PAN, Kuo-Hua
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:According to the present disclosure, hybrid fins positioned between two different epitaxial source/drain features are recessed to prevent conductive material from entering interior air gaps of the hybrid fins, thus, preventing short circuit between source/drain contacts and gate electrodes. Recessing the hybrid fins may be achieved by enlarging mask during semiconductor fin etch back, therefore, without increasing production cost.