GATE STRUCTURES IN TRANSISTOR DEVICES AND METHODS OF FORMING SAME

GATE STRUCTURES IN TRANSISTOR DEVICES AND METHODS OF FORMING SAME

A semiconductor device includes first transistor having a first gate stack and first source/drain regions on opposing sides of the first gate stack; a second transistor having a second gate stack and second source/drain regions on opposing sides of the second gate stack; and a gate isolation structu...

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Bibliographische Detailangaben
Hauptverfasser: Wang, Chieh-Ping, Huang, Tai-Chun, Lu, Bo-Cyuan, Chen, Ting-Gang, Chui, Chi On
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:A semiconductor device includes first transistor having a first gate stack and first source/drain regions on opposing sides of the first gate stack; a second transistor having a second gate stack and second source/drain regions on opposing sides of the second gate stack; and a gate isolation structure separating the first gate stack from the second gate stack. The gate isolation structure includes a dielectric liner having a varied thickness along sidewalls of the first gate stack and the second gate stack and a dielectric fill material over the dielectric liner, wherein the dielectric fill material comprises a seam.