METHOD OF MANUFACTURING A REDISTRIBUTION LAYER, REDISTRIBUTION LAYER AND INTEGRATED CIRCUIT INCLUDING THE REDISTRIBUTION LAYER

A method of manufacturing a redistribution layer includes: forming an insulating layer on a wafer, delimited by a top surface and a bottom surface in contact with the wafer; forming a conductive body above the top surface of the insulating layer; forming a first coating region extending around and a...

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Bibliographische Detailangaben
Hauptverfasser: CUPETA, Carmela, VENEGONI, Ivan, PIPIA, Francesco Maria, COLPANI, Paolo, BOSSI, Simone, SCIARRILLO, Samuele
Format: Patent
Sprache:eng
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Zusammenfassung:A method of manufacturing a redistribution layer includes: forming an insulating layer on a wafer, delimited by a top surface and a bottom surface in contact with the wafer; forming a conductive body above the top surface of the insulating layer; forming a first coating region extending around and above the conductive body, in contact with the conductive body, and in contact with the top surface of the insulating layer in correspondence of a bottom surface of the first coating region; applying a thermal treatment to the wafer in order to modify a residual stress of the first coating region, forming a gap between the bottom surface of the first coating region and the top surface of the insulating layer; forming, after applying the thermal treatment, a second coating region extending around and above the first coating region, filling said gap and completely sealing the first coating region.