LOCAL DENSITY CONTROL FOR METAL CAPACITANCE REDUCTION

An integrated circuit structure includes a plurality of interconnect lines and a plurality of dummy lines that are co-planar with the plurality of interconnect lines, where a ratio of line length to end-to-end spacing of the dummy lines varies inversely with a density of the interconnect lines withi...

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Hauptverfasser:	Bhawe, Dhananjay, Baylav, Burak
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CALCULATING COMPUTING COUNTING ELECTRIC DIGITAL DATA PROCESSING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY PHYSICS SEMICONDUCTOR DEVICES
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creator	Bhawe, Dhananjay Baylav, Burak
description	An integrated circuit structure includes a plurality of interconnect lines and a plurality of dummy lines that are co-planar with the plurality of interconnect lines, where a ratio of line length to end-to-end spacing of the dummy lines varies inversely with a density of the interconnect lines within each of a plurality of regions. The regions are of approximately equal area within a rectangular grid array.
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title	LOCAL DENSITY CONTROL FOR METAL CAPACITANCE REDUCTION
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