LIGHT-EMITTING ELEMENT AND METHOD OF PRODUCING THE SAME
To improve light emission efficiency, in a light-emitting element including a first InAs layer that is undoped or doped with an n-type dopant; an active layer including one or more InAsySb1-y layers (0
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | To improve light emission efficiency, in a light-emitting element including a first InAs layer that is undoped or doped with an n-type dopant; an active layer including one or more InAsySb1-y layers (0 |
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