MEMORY WITH OPTIMIZED RESISTIVE LAYERS

A memory system may include separate amounts or types of resistive material that may be deposited over memory cells and conductive vias using separate resistive layers in the access lines. A first resistive material layer may be deposited over the memory cells prior to performing an array terminatio...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Barton, Adam Thomas, Ege, Efe Sinan, Zheng, Pengyuan, Baker, Kevin Lee, Venigalla, Rajasekhar, Wei, Lei
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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