Silicon Etching Solution and Method for Producing Silicon Device Using the Etching Solution

Silicon Etching Solution and Method for Producing Silicon Device Using the Etching Solution

A silicon etching solution includes a mixed solution comprising a quaternary alkylammonium hydroxide and water and further comprises a compound represented by the following formula (1):R1O-(CmH2mO)n-R2   (1)wherein R1 is a hydrogen atom or an alkyl group having 1 to 3 carbon atoms, R2 is a hydrogen...

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Bibliographische Detailangaben
Hauptverfasser: TONO, Seiji, SEIKE, Yoshiki, NEGORO, Sei, KOBAYASHI, Kenji
Format: Patent
Sprache:eng
Schlagworte:
ADHESIVES
BASIC ELECTRIC ELEMENTS
CHEMISTRY
DYES
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE
METALLURGY
MISCELLANEOUS APPLICATIONS OF MATERIALS
MISCELLANEOUS COMPOSITIONS
NATURAL RESINS
PAINTS
POLISHES
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A silicon etching solution includes a mixed solution comprising a quaternary alkylammonium hydroxide and water and further comprises a compound represented by the following formula (1):R1O-(CmH2mO)n-R2   (1)wherein R1 is a hydrogen atom or an alkyl group having 1 to 3 carbon atoms, R2 is a hydrogen atom or an alkyl group having 1 to 6 carbon atoms, m is an integer of 2 to 6, and n is 1 or 2.