SOLID-STATE IMAGING ELEMENT AND ELECTRONIC DEVICE

A solid-state imaging element of the present disclosure has arranged inside a pixel: a charge accumulation unit that accumulates a charge photoelectrically converted by a photoelectric conversion unit; a reset transistor that selectively applies a reset voltage to the charge accumulation unit; an amplification transistor having a gate electrode being electrically connected to the charge accumulation unit; and a selection transistor connected in series to the amplification transistor. Additionally, the solid-state imaging element includes: first wiring electrically connecting the charge accumulation unit and the gate electrode of the amplification transistor; second wiring electrically connected to a common connection node of the amplification transistor and the selection transistor and formed along the first wiring; and third wiring electrically connecting the amplification transistor and the selection transistor.