METHOD FOR PROGRAMMING AN ARRAY OF RESISTIVE MEMORY CELLS

A method for programming at least one resistive memory cell of an array of resistive memory cells, includes a sequence of N programming cycles, N being an integer greater than or equal to 2, each programming cycle including a set procedure and a reset procedure, each set procedure including the appl...

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Bibliographische Detailangaben

Hauptverfasser:	MOLAS, Gabriel, BRICALLI, Alessandro, REGEV, Amir, PICCOLBONI, Guiseppe
Format:	Patent
Sprache:	eng
Schlagworte:	INFORMATION STORAGE PHYSICS STATIC STORES
Online-Zugang:	Volltext bestellen
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