METHOD FOR PROGRAMMING AN ARRAY OF RESISTIVE MEMORY CELLS

METHOD FOR PROGRAMMING AN ARRAY OF RESISTIVE MEMORY CELLS

A method for programming at least one resistive memory cell of an array of resistive memory cells, includes a sequence of N programming cycles, N being an integer greater than or equal to 2, each programming cycle including a set procedure and a reset procedure, each set procedure including the appl...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: MOLAS, Gabriel, BRICALLI, Alessandro, REGEV, Amir, PICCOLBONI, Guiseppe
Format: Patent
Sprache:eng
Schlagworte:
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Zusammenfassung:A method for programming at least one resistive memory cell of an array of resistive memory cells, includes a sequence of N programming cycles, N being an integer greater than or equal to 2, each programming cycle including a set procedure and a reset procedure, each set procedure including the application of a set technique chosen among a plurality of set techniques, the method including acquiring a bit error ratio value corresponding to each programming cycle for each set technique; and at each programming cycle, applying the set technique having the lowest bit error ratio value corresponding to the programming cycle.