DEPOSITION OF PURE METAL FILMS

Provided herein are methods and apparatus for deposition of pure metal films. The methods involve the use of oxygen-containing precursors. The metals include molybdenum (Mo) and tungsten (W). To deposit pure films with no more than one atomic percentage oxygen, the reducing agent to metal precursor...

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Bibliographische Detailangaben
Hauptverfasser:	BUTAIL, Gorun, THOMBARE, Shruti Vivek, VAN CLEEMPUT, Patrick A, FISHER, Ilanit
Format:	Patent
Sprache:	eng
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	Provided herein are methods and apparatus for deposition of pure metal films. The methods involve the use of oxygen-containing precursors. The metals include molybdenum (Mo) and tungsten (W). To deposit pure films with no more than one atomic percentage oxygen, the reducing agent to metal precursor ratio is significantly greater than 1. Molar ratios of 100:1 to 10000:1 may be used in some embodiments.