SEMICONDUCTOR DEVICE

According to one embodiment, a semiconductor device includes first to third electrodes, a semiconductor member, a first insulating member, and a nitride member. The third electrode includes a first electrode portion. The first electrode portion is between the first and second electrodes. The semiconductor member includes first and second semiconductor regions. The first semiconductor region includes first to fifth partial regions. The second semiconductor region includes first and second semiconductor portions. The first semiconductor portion is electrically connected with the first electrode. The second semiconductor portion is electrically connected with the second electrode. The first insulating member includes a first insulating region. The first insulating region is between the third partial region and the first electrode portion. The nitride member includes a first nitride region. The first nitride region is between the third partial region and the first insulating region, and includes first nitride portions and second nitride portions.