SEMICONDUCTOR STRUCTURES FOR GALVANIC ISOLATION

SEMICONDUCTOR STRUCTURES FOR GALVANIC ISOLATION

The present disclosure generally relates to semiconductor structures for capacitive isolation, and structures incorporating the same. More particularly, the present disclosure relates to capacitive isolation structures for high voltage applications. The present disclosure also relates to methods of...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: MUN, BONG WOONG, KOO, JEOUNG MO
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:The present disclosure generally relates to semiconductor structures for capacitive isolation, and structures incorporating the same. More particularly, the present disclosure relates to capacitive isolation structures for high voltage applications. The present disclosure also relates to methods of forming structures for capacitive isolation and the structures incorporating the same. The disclosed semiconductor structures may enable a smaller device footprint and reduced dimensions of components on an IC chip, whilst ensuring galvanic isolation between circuits.