SEMICONDUCTOR DEVICE

A semiconductor device (1) according to the present disclosure includes a semiconductor chip (2), an interposer substrate (3), and a die-bonding material (4) formed in a partially opened annular shape in a plan view. The semiconductor chip (2) includes a region in which an integration density of an...

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Bibliographische Detailangaben
Hauptverfasser:	KOSHINAMI, SUSUMU, KOBAYASHI, KAZUMI, TOYOSHIMA, YOSHIHIKO, NISHIDE, TSUTOMU, YOSHIDA, TAKESHI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	A semiconductor device (1) according to the present disclosure includes a semiconductor chip (2), an interposer substrate (3), and a die-bonding material (4) formed in a partially opened annular shape in a plan view. The semiconductor chip (2) includes a region in which an integration density of an electronic circuit is high (23, 24, and 25) and a region in which the integration density is low (22). The semiconductor chip (2) is implemented on the interposer substrate (3). The die-bonding material (4) formed in a partially opened annular shape in a plan view is provided between the region in which the integration density is high (23, 24, and 25) in the semiconductor chip (2) and the interposer substrate (3).