DEVICE CONTAINING METAL OXIDE-CONTAINING LAYERS

The present invention is directed to a method for preparing a device, the method comprising: forming a first layer on top of a first electrode, the layer comprising a metal oxide that is formed by the deposition of a metal oxide precursor composition that can be directly patterned by means of exposure to electromagnetic radiation to form a patterned metal oxide layer, optionally forming a second electrode over the first device layer, wherein the method further includes optionally forming a layer comprising quantum dots on top of the first layer or after formation of the first layer, and to a device comprising a first layer comprising a metal oxide prepared by the method of the invention.