INTEGRATED CIRCUIT DEVICES INCLUDING TRANSISTOR STACKS HAVING DIFFERENT THRESHOLD VOLTAGES AND METHODS OF FORMING THE SAME

INTEGRATED CIRCUIT DEVICES INCLUDING TRANSISTOR STACKS HAVING DIFFERENT THRESHOLD VOLTAGES AND METHODS OF FORMING THE SAME

Integrated circuit devices may include two transistor stacks including lower transistors having different threshold voltages and upper transistors having different threshold voltages. Gate insulators of the lower transistors may have different dipole elements or different areal densities of dipole e...

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Bibliographische Detailangaben
Hauptverfasser: SON, GIL HWAN, YIM, JEONGHYUK, SEO, KANG ILL, KIM, KI-IL
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:Integrated circuit devices may include two transistor stacks including lower transistors having different threshold voltages and upper transistors having different threshold voltages. Gate insulators of the lower transistors may have different dipole elements or different areal densities of dipole elements, and the upper transistors may have different gate electrode structures.