APPARATUS AND METHOD FOR REMOVAL OF OXIDE AND CARBON FROM SEMICONDUCTOR FILMS IN A SINGLE PROCESSING CHAMBER
A system and method for removing both carbon-based contaminants and oxygen-based contaminants from a semiconductor substrate within a single process chamber is disclosed. The invention may comprise utilization of remote plasma units and multiple gas sources to perform the process within the single p...
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Sprache: | eng |
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Zusammenfassung: | A system and method for removing both carbon-based contaminants and oxygen-based contaminants from a semiconductor substrate within a single process chamber is disclosed. The invention may comprise utilization of remote plasma units and multiple gas sources to perform the process within the single process chamber. |
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