APPARATUS AND METHOD FOR REMOVAL OF OXIDE AND CARBON FROM SEMICONDUCTOR FILMS IN A SINGLE PROCESSING CHAMBER

A system and method for removing both carbon-based contaminants and oxygen-based contaminants from a semiconductor substrate within a single process chamber is disclosed. The invention may comprise utilization of remote plasma units and multiple gas sources to perform the process within the single p...

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Bibliographische Detailangaben
Hauptverfasser: Lin, Xing, Jotheeswaran, Bubesh Babu, Wang, Fei, Gao, Peipei, Tolle, John, Hill, Eric, Ramanathan, Vish
Format: Patent
Sprache:eng
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Zusammenfassung:A system and method for removing both carbon-based contaminants and oxygen-based contaminants from a semiconductor substrate within a single process chamber is disclosed. The invention may comprise utilization of remote plasma units and multiple gas sources to perform the process within the single process chamber.