METHOD FOR HOMOGENISING THE CROSS-SECTION OF NANOWIRES FOR LIGHT-EMITTING DIODES

A method of manufacturing an optoelectronic device including-light-emitting diodes comprising the forming of three-dimensional semiconductor elements made of a III-V compound, each comprising a lower portion and an upper portion and, for each semiconductor element, the forming of an active area cove...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Gruart, Marion, Gilet, Philippe, Daudin, Bruno-Jules, Chikhaoui, Walf
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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