METHOD FOR HOMOGENISING THE CROSS-SECTION OF NANOWIRES FOR LIGHT-EMITTING DIODES
A method of manufacturing an optoelectronic device including-light-emitting diodes comprising the forming of three-dimensional semiconductor elements made of a III-V compound, each comprising a lower portion and an upper portion and, for each semiconductor element, the forming of an active area cove...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A method of manufacturing an optoelectronic device including-light-emitting diodes comprising the forming of three-dimensional semiconductor elements made of a III-V compound, each comprising a lower portion and an upper portion and, for each semiconductor element, the forming of an active area covering the top of the upper portion and the forming of at least one semiconductor area of the III-V compound covering the active area. The upper portions are formed by vapor deposition at a pressure lower than 1.33 mPa. |
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