FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME

FIN FIELD-EFFECT TRANSISTOR AND METHOD OF FORMING THE SAME

A semiconductor device includes a semiconductor fin. The semiconductor device includes a gate spacer over the semiconductor fin. A lower portion of the gate spacer surrounds a first region and an upper portion of the gate spacer surrounds a second region. The semiconductor device includes a gate die...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Lin, Chun-Neng, Lian, Jian-Jou, Yeh, Ming-Hsi
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A semiconductor device includes a semiconductor fin. The semiconductor device includes a gate spacer over the semiconductor fin. A lower portion of the gate spacer surrounds a first region and an upper portion of the gate spacer surrounds a second region. The semiconductor device includes a gate dielectric within the first region. The semiconductor device includes a metal gate within the first region. The semiconductor device includes a dielectric protection layer, in contact with the gate dielectric layer, that includes a first portion within the second region and a second portion lining a top surface of the metal gate.