APPARATUS FOR FABRICATING A SEMICONDUCTOR STRUCTURE AND METHOD OF FABRICATING A SEMICONDUCTOR STRUCTURE

The present disclosure provides a method for fabricating a semiconductor structure, including placing a wafer on a chuck, wherein the wafer is surrounded by a focus ring, the focus ring is supported by a first actuator, wherein the first actuator is in a cavity defined by the chuck and the edge ring...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: KOAI, KEITH KUANG-KUO, CHEN, HSIN-LIANG, WANG, WENIH, LIU, SHIH-KUO
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:The present disclosure provides a method for fabricating a semiconductor structure, including placing a wafer on a chuck, wherein the wafer is surrounded by a focus ring, the focus ring is supported by a first actuator, wherein the first actuator is in a cavity defined by the chuck and the edge ring, wherein the first actuator includes an outer ring disposed in the cavity, a piezoelectric layer apart from a top surface of the cavity, wherein an edge of the piezoelectric layer is fixed by the outer ring, and an inner ring disposed in the chamber at a center portion of the piezoelectric layer, performing plasma etch on a surface of the wafer, and controlling a distance between a gas distribution plate and a top surface of the focus ring to be less than a threshold value by the first actuator.