METHOD FOR PRODUCING SEMICONDUCTOR WAFERS FROM SILICON

METHOD FOR PRODUCING SEMICONDUCTOR WAFERS FROM SILICON

Silicon single crystals having an oxygen concentration of greater than 2×1017 at/cm3, a concentration of pinholes having a diameter of greater than 100 μm of less than 1.0×10−5 l/cm3, a carbon concentration of less than 5.5×1014 at/cm3, an iron concentration of less than 5.0×109 at/cm3, a COP concen...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: BALANETSKYY, Sergiy, DANIEL, Matthias
Format: Patent
Sprache:eng
Schlagworte:
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
CHEMISTRY
CRYSTAL GROWTH
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Silicon single crystals having an oxygen concentration of greater than 2×1017 at/cm3, a concentration of pinholes having a diameter of greater than 100 μm of less than 1.0×10−5 l/cm3, a carbon concentration of less than 5.5×1014 at/cm3, an iron concentration of less than 5.0×109 at/cm3, a COP concentration of fewer than 1000 defects/cm3, a LPIT concentration of fewer than 1 defect/cm2 and a crystal diameter of greater than 200 mm, are produced by the Czochralski method employing a purge gas at specified pressures and flow rates.