ETCH STOP AND PROTECTION LAYER FOR CAPACITOR PROCESSING IN ELECTROACOUSTIC DEVICES
Electroacoustic devices with a capacitive element and methods for fabricating such electroacoustic devices. An example method includes forming an acoustic device above a first region of a substrate, and forming a capacitive element above a second region of the substrate and adjacent to the acoustic...
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| creator | ESQUIUS MOROTE, Marc GIESEN, Marcel LUKASHOV, Ilya FREISLEBEN, Stefan TELGMANN, Thomas POHLNER, Stephan JUNGKUNZ, Matthias EGGS, Christoph |
| description | Electroacoustic devices with a capacitive element and methods for fabricating such electroacoustic devices. An example method includes forming an acoustic device above a first region of a substrate, and forming a capacitive element above a second region of the substrate and adjacent to the acoustic device. The forming of the capacitive element may include forming a protective layer above the substrate where a first portion of the protective layer is above the second region of the substrate and a second portion of the protective layer is above the first region of the substrate, forming a dielectric region above the protective layer, and forming an electrode above the dielectric region. The dielectric region may include a different material than the protective layer. |
| format | Patent |
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An example method includes forming an acoustic device above a first region of a substrate, and forming a capacitive element above a second region of the substrate and adjacent to the acoustic device. The forming of the capacitive element may include forming a protective layer above the substrate where a first portion of the protective layer is above the second region of the substrate and a second portion of the protective layer is above the first region of the substrate, forming a dielectric region above the protective layer, and forming an electrode above the dielectric region. 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An example method includes forming an acoustic device above a first region of a substrate, and forming a capacitive element above a second region of the substrate and adjacent to the acoustic device. The forming of the capacitive element may include forming a protective layer above the substrate where a first portion of the protective layer is above the second region of the substrate and a second portion of the protective layer is above the first region of the substrate, forming a dielectric region above the protective layer, and forming an electrode above the dielectric region. The dielectric region may include a different material than the protective layer.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | DEAF-AID SETS ELECTRIC COMMUNICATION TECHNIQUE ELECTRICITY LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKEACOUSTIC ELECTROMECHANICAL TRANSDUCERS PUBLIC ADDRESS SYSTEMS |
| title | ETCH STOP AND PROTECTION LAYER FOR CAPACITOR PROCESSING IN ELECTROACOUSTIC DEVICES |
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