ETCH STOP AND PROTECTION LAYER FOR CAPACITOR PROCESSING IN ELECTROACOUSTIC DEVICES

Electroacoustic devices with a capacitive element and methods for fabricating such electroacoustic devices. An example method includes forming an acoustic device above a first region of a substrate, and forming a capacitive element above a second region of the substrate and adjacent to the acoustic...

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Bibliographische Detailangaben
Hauptverfasser: ESQUIUS MOROTE, Marc, GIESEN, Marcel, LUKASHOV, Ilya, FREISLEBEN, Stefan, TELGMANN, Thomas, POHLNER, Stephan, JUNGKUNZ, Matthias, EGGS, Christoph
Format: Patent
Sprache:eng
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Zusammenfassung:Electroacoustic devices with a capacitive element and methods for fabricating such electroacoustic devices. An example method includes forming an acoustic device above a first region of a substrate, and forming a capacitive element above a second region of the substrate and adjacent to the acoustic device. The forming of the capacitive element may include forming a protective layer above the substrate where a first portion of the protective layer is above the second region of the substrate and a second portion of the protective layer is above the first region of the substrate, forming a dielectric region above the protective layer, and forming an electrode above the dielectric region. The dielectric region may include a different material than the protective layer.