Power Semiconductor Package Unit of Surface Mount Technology and Manufacturing Method Thereof

The present invention includes a chip, a plastic film layer, and an electroplated layer. A front side and a back side of the chip each comprises a signal contact. The plastic film layer covers the chip and includes a first via and a second via. The first via is formed adjacent to the chip, and the s...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Wang, Chien-Chun, Li, Chi-Hsueh, Ho, Chung-Hsiung, Huang, Wen-Liang, Hung, Wei-Ming, Shen, Shun-Chi
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:The present invention includes a chip, a plastic film layer, and an electroplated layer. A front side and a back side of the chip each comprises a signal contact. The plastic film layer covers the chip and includes a first via and a second via. The first via is formed adjacent to the chip, and the second via is formed extending to the signal contact of the front side. A conductive layer is added in the first and the second via. The conductive layer in the second via is electrically connected to the signal contact of the front side. Through the electroplated layer, the signal contact on the back side is electrically connected to the conductive layer in the first via. The conductive layer protrudes from the plastic film layer as conductive terminals. The present invention achieves electrical connection of the chip without using expensive die bonding materials.