SEMICONDUCTOR DEVICE TRENCH TERMINATION STRUCTURE

A semiconductor device having a termination structure is provided that is useful for trench semiconductor devices, such as trench Schottky diodes. The device includes a termination structure having a primary termination trench including a first insulating layer arranged on a sidewall and bottom, and a first polysilicon region spaced apart from the sidewall and bottom by the first insulating layer; and a secondary termination trench arranged further away from the active region than the primary termination trench. The secondary termination trench includes a second insulating layer arranged on a sidewall and bottom, and polysilicon spacers separated from the sidewall and bottom by the second insulating layer. The polysilicon spacers are spaced apart and arranged on opposing ends of the secondary termination trench in an outward direction with respect to the active region, and a width of the primary termination trench is less than a width of the secondary termination trench.