ONE-TIME PROGRAMMABLE MEMORY STRUCTURE

A one-time programmable memory structure including a substrate, a transistor, a capacitor, and an interconnect structure is provided. The transistor is located on the substrate. The capacitor includes a first electrode, a second electrode, and an insulating layer. The first electrode is disposed abo...

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Bibliographische Detailangaben
Hauptverfasser:	Tseng, Ching Hsiang, Pai, Chi-Horn, Lee, Kuo-Hsing, Hsueh, Sheng-Yuan, Wong, Chang Chien, Hsu, Shih-Chieh
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	A one-time programmable memory structure including a substrate, a transistor, a capacitor, and an interconnect structure is provided. The transistor is located on the substrate. The capacitor includes a first electrode, a second electrode, and an insulating layer. The first electrode is disposed above the substrate. The second electrode is disposed on the first electrode. The first electrode is located between the second electrode and the substrate. The insulating layer is disposed between the first electrode and the second electrode. The interconnect structure is electrically connected between the transistor and the first electrode of the capacitor. The interconnect structure is electrically connected to the first electrode at a top surface of the first electrode.