CMOS OVER ARRAY OF 3-D DRAM DEVICE

CMOS OVER ARRAY OF 3-D DRAM DEVICE

Disclosed are 3-D DRAM devices and methods of forming 3-D DRAM devices. One method may include forming a stack of DRAM device layers, forming a MOS substrate directly atop the stack of alternating DRAM device layers, and forming a trench through the MOS substrate and the stack of DRAM device layers....

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Fishburn, Fred, Varghese, Sony
Format: Patent
Sprache:eng
Schlagworte:
ELECTRICITY
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Beschreibung
Zusammenfassung:Disclosed are 3-D DRAM devices and methods of forming 3-D DRAM devices. One method may include forming a stack of DRAM device layers, forming a MOS substrate directly atop the stack of alternating DRAM device layers, and forming a trench through the MOS substrate and the stack of DRAM device layers. The method may further include depositing a protection layer over the MOS substrate, wherein the protection layer is deposited at a non-zero angle of inclination relative to a vertical extending from a top surface of the MOS substrate.