Method of Fine Pitch Hybrid Bonding with Dissimilar CTE Wafers and Resulting Structures

Method of Fine Pitch Hybrid Bonding with Dissimilar CTE Wafers and Resulting Structures

Hybrid bonded structures and methods of manufacture are described. In an embodiment, a hybrid bonded structure includes a first plurality of first conductive bonding regions of a first substrate stack bonded directly to a second plurality of second conductive bonding regions of a second substrate st...

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Hauptverfasser: Ou, Fang, Liu, Saijin, Jiang, Tongbi T
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Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator Ou, Fang
Liu, Saijin
Jiang, Tongbi T
description Hybrid bonded structures and methods of manufacture are described. In an embodiment, a hybrid bonded structure includes a first plurality of first conductive bonding regions of a first substrate stack bonded directly to a second plurality of second conductive bonding regions of a second substrate stack, and a first dielectric layer of the first substrate stack bonded to a second dielectric layer of the second substrate stack with an intermediate organic adhesive layer.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Method of Fine Pitch Hybrid Bonding with Dissimilar CTE Wafers and Resulting Structures
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