Method of Fine Pitch Hybrid Bonding with Dissimilar CTE Wafers and Resulting Structures

Method of Fine Pitch Hybrid Bonding with Dissimilar CTE Wafers and Resulting Structures

Hybrid bonded structures and methods of manufacture are described. In an embodiment, a hybrid bonded structure includes a first plurality of first conductive bonding regions of a first substrate stack bonded directly to a second plurality of second conductive bonding regions of a second substrate st...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Ou, Fang, Liu, Saijin, Jiang, Tongbi T
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Hybrid bonded structures and methods of manufacture are described. In an embodiment, a hybrid bonded structure includes a first plurality of first conductive bonding regions of a first substrate stack bonded directly to a second plurality of second conductive bonding regions of a second substrate stack, and a first dielectric layer of the first substrate stack bonded to a second dielectric layer of the second substrate stack with an intermediate organic adhesive layer.