HARDMASK COMPOSITION, HARDMASK LAYER, AND PATTERN FORMING METHOD

The present invention relates to a hardmask composition including a compound represented by Chemical Formula 1 and a solvent, a hardmask layer including a cured product of the hardmask composition, and a pattern forming method using the hardmask composition.In Chemical Formula 1, the definitions of...

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Bibliographische Detailangaben
1. Verfasser:	LIM, Jaebum
Format:	Patent
Sprache:	eng
Schlagworte:	ACYCLIC OR CARBOCYCLIC COMPOUNDS APPARATUS SPECIALLY ADAPTED THEREFOR CHEMISTRY CINEMATOGRAPHY ELECTROGRAPHY HETEROCYCLIC COMPOUNDS HOLOGRAPHY MATERIALS THEREFOR METALLURGY ORGANIC CHEMISTRY ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS
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Beschreibung
Zusammenfassung:	The present invention relates to a hardmask composition including a compound represented by Chemical Formula 1 and a solvent, a hardmask layer including a cured product of the hardmask composition, and a pattern forming method using the hardmask composition.In Chemical Formula 1, the definitions of A, R1 to R5, and n are as described in the specification.