METHODS FOR GAA I/O FORMATION BY SELECTIVE EPI REGROWTH

METHODS FOR GAA I/O FORMATION BY SELECTIVE EPI REGROWTH

Electronic devices and methods of forming electronic devices with gate-all-around non-I/O devices and finlike structures for I/O devices are described. A plurality of dummy gates is etched to expose a fin comprising alternating layers of a first material and a second material. The second material la...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Stout, Phillip, Bauer, Matthias, Siddiqui, Naved Ahmed, Colombeau, Benjamin
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Electronic devices and methods of forming electronic devices with gate-all-around non-I/O devices and finlike structures for I/O devices are described. A plurality of dummy gates is etched to expose a fin comprising alternating layers of a first material and a second material. The second material layers are removed to create openings and the first material layers remaining are epitaxially grown to form a finlike structure.