SOLID-STATE IMAGE SENSOR AND ELECTRONIC APPARATUS

This technology relates to a solid-state image sensor configured to make smaller the chip size of a CIS that uses an organic photoelectric conversion film, and to an electronic apparatus. A solid-state image sensor according to a first aspect of this technology is characterized in that it includes a...

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Bibliographische Detailangaben
Hauptverfasser:	TAYANAKA, HIROSHI, MATSUMOTO, AKIRA
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC COMMUNICATION TECHNIQUE ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY PICTORIAL COMMUNICATION, e.g. TELEVISION SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	This technology relates to a solid-state image sensor configured to make smaller the chip size of a CIS that uses an organic photoelectric conversion film, and to an electronic apparatus. A solid-state image sensor according to a first aspect of this technology is characterized in that it includes a first substrate and a second substrate stacked one on top of the other and a first organic photoelectric conversion film formed on the first substrate and that a latch circuit is formed on the second substrate. This technology may be applied to back-illuminated CISs, for example.