METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE

A method of forming a semiconductor device is proposed. The method includes providing a semiconductor structure. The method further includes forming an auxiliary layer directly on a part of the semiconductor structure. Silicon and nitrogen are main components of the auxiliary layer. The method furth...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Karmous, Alim, Storbeck, Olaf
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A method of forming a semiconductor device is proposed. The method includes providing a semiconductor structure. The method further includes forming an auxiliary layer directly on a part of the semiconductor structure. Silicon and nitrogen are main components of the auxiliary layer. The method further includes forming a conductive material on the auxiliary layer. The conductive material incudes AlSiCu, AlSi or tungsten, and is electrically connected to the part of the semiconductor structure via the auxiliary layer.