SEMICONDUCTOR MEMORY AND FORMING METHOD THEREOF

A method of forming a semiconductor memory includes: providing comprising a storage area and a peripheral area located outside the storage area, wherein the substrate has and a plurality of bit line contact parts and a plurality of capacitor contact parts located in the storage area, and a peripheral gate contact part and a peripheral circuit contact part located in the peripheral area; forming a plurality of bit lines, and simultaneously forming a peripheral gate; forming a bit line isolation layer, and simultaneously forming a peripheral gate isolation layer; forming a first conductive capacitor layer in contact with the capacitor contact part, and simultaneously forming a first peripheral conductive layer in contact with the peripheral circuit contact part; forming a first air gap in the bit line isolation layer, and simultaneously forming a second air gap in the peripheral gate isolation layer.