RUTHENIUM ETCHING PROCESS

RUTHENIUM ETCHING PROCESS

Embodiments of this disclosure provide methods for etching ruthenium. A halide-containing-gas is flowed into a substrate processing chamber, and then an oxygen-containing gas is flowed into the substrate processing chamber. The methods may include atomic layer etching (ALE). The methods may be condu...

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Hauptverfasser: Anthis, Jeffrey W, Kazem, Nasrin
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Kazem, Nasrin
description Embodiments of this disclosure provide methods for etching ruthenium. A halide-containing-gas is flowed into a substrate processing chamber, and then an oxygen-containing gas is flowed into the substrate processing chamber. The methods may include atomic layer etching (ALE). The methods may be conducted at higher processing chambers, permitting deposition and etching of ruthenium to be conducted in the same processing chamber.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title RUTHENIUM ETCHING PROCESS
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