METHOD OF PROCESSING SUBSTRATE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING SYSTEM, AND RECORDING MEDIUM

METHOD OF PROCESSING SUBSTRATE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING SYSTEM, AND RECORDING MEDIUM

There is provided a technique that includes: (a) forming a first film in an amorphous state on the substrate by supplying a first process gas to the substrate; (b) forming a second film in an amorphous state, which has a crystallization temperature lower than a crystallization temperature of the fir...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: TAKAHASHI, Masahiro, HORITA, Hideki
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
CHEMICAL SURFACE TREATMENT
CHEMISTRY
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING MATERIAL WITH METALLIC MATERIAL
COATING METALLIC MATERIAL
DIFFUSION TREATMENT OF METALLIC MATERIAL
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL
METALLURGY
SEMICONDUCTOR DEVICES
SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:There is provided a technique that includes: (a) forming a first film in an amorphous state on the substrate by supplying a first process gas to the substrate; (b) forming a second film in an amorphous state, which has a crystallization temperature lower than a crystallization temperature of the first film, on the first film by supplying a second process gas to the substrate; (c) crystallizing the first film and the second film formed on the substrate by heating the first film and the second film; and (d) removing at least the second film by exposing a surface of the substrate to an etching agent after crystallizing the first film and the second film.