METHOD AND SYSTEM FOR MANUFACTURING A SEMICONDUCTOR DEVICE

The present disclosure provides a method for manufacturing a semiconductor structure. The method includes receiving layout data representing information for manufacturing the semiconductor structure. A first parasitic capacitance is formed in a first region and a second parasitic capacitance is form...

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Bibliographische Detailangaben
Hauptverfasser:	HUANG, HSUAN-MING, WANG, MING-YIH, CHANG, MINGNI, LU, YINLUNG, TENG, AN SHUN
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CALCULATING COMPUTING COUNTING ELECTRIC DIGITAL DATA PROCESSING ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY PHYSICS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	The present disclosure provides a method for manufacturing a semiconductor structure. The method includes receiving layout data representing information for manufacturing the semiconductor structure. A first parasitic capacitance is formed in a first region and a second parasitic capacitance is formed in a second region. The method further includes determining a parasitic capacitance difference between the first region and the second region; and forming a dummy conductor in the second region. A system for manufacturing a semiconductor device is also provided.