SEMICONDUCTOR MEMORY DEVICE

SEMICONDUCTOR MEMORY DEVICE

A semiconductor memory device according to an embodiment includes a substrate, a source line, a plurality of word lines, a pillar, and a first contact portion. The word lines are spaced apart from each other in a first direction. A bottom portion of the pillar reaches the source line. The first cont...

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Hauptverfasser: IWASAKI, Taichi, KUBOTA, Yoshihiro
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator IWASAKI, Taichi
KUBOTA, Yoshihiro
description A semiconductor memory device according to an embodiment includes a substrate, a source line, a plurality of word lines, a pillar, and a first contact portion. The word lines are spaced apart from each other in a first direction. A bottom portion of the pillar reaches the source line. The first contact portion is provided on the substrate. The first contact portion is connected between the source line and the substrate. An inside of the first contact portion, or a portion in which a conductive layer included in the source line is in contact with the first contact portion, includes a portion functioning as a diode. The portion functioning as the diode is electrically connected in a reverse direction from the source line toward the substrate.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title SEMICONDUCTOR MEMORY DEVICE
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