SEMICONDUCTOR MEMORY DEVICE

A semiconductor memory device according to an embodiment includes a substrate, a source line, a plurality of word lines, a pillar, and a first contact portion. The word lines are spaced apart from each other in a first direction. A bottom portion of the pillar reaches the source line. The first cont...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	IWASAKI, Taichi, KUBOTA, Yoshihiro
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	A semiconductor memory device according to an embodiment includes a substrate, a source line, a plurality of word lines, a pillar, and a first contact portion. The word lines are spaced apart from each other in a first direction. A bottom portion of the pillar reaches the source line. The first contact portion is provided on the substrate. The first contact portion is connected between the source line and the substrate. An inside of the first contact portion, or a portion in which a conductive layer included in the source line is in contact with the first contact portion, includes a portion functioning as a diode. The portion functioning as the diode is electrically connected in a reverse direction from the source line toward the substrate.