SEMICONDUCTOR DEVICE HAVING GATE TRENCH
Disclosed herein is a method that includes forming a gate trench in a semiconductor substrate, forming a gate insulating film on an inner wall of the gate trench, forming a gate electrode in the gate trench via the gate insulating film, ashing a top surface of the gate electrode to form a first insu...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | Disclosed herein is a method that includes forming a gate trench in a semiconductor substrate, forming a gate insulating film on an inner wall of the gate trench, forming a gate electrode in the gate trench via the gate insulating film, ashing a top surface of the gate electrode to form a first insulating film, and for a gate cap insulating film embedded in the gate trench to cover the first insulating film. |
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