LIGHT-EMITTING DIODE AND METHOD FOR PRODUCING SAME

LIGHT-EMITTING DIODE AND METHOD FOR PRODUCING SAME

A quantum dot light emitting diode according to various embodiments of the present disclosure includes a first electrode and a second electrode that are opposite to each other; a light emitting layer that is located between the first electrode and the second electrode and includes a quantum dot; and...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: KIM, Hyeok, KIM, Sang Hyub, LEE, Joon Hyung, LEE, Sang Wook, HAN, Jeong Woo, LEE, Chang Hee, HEO, Young Woo, KIM, Jeong Joo
Format: Patent
Sprache:eng
Schlagworte:
ELECTRICITY
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Beschreibung
Zusammenfassung:A quantum dot light emitting diode according to various embodiments of the present disclosure includes a first electrode and a second electrode that are opposite to each other; a light emitting layer that is located between the first electrode and the second electrode and includes a quantum dot; and an electron transport layer that is arranged between the first electrode and the light emitting layer and includes a metal oxide thin film, wherein the metal oxide thin film has a composition including at least one selected from the group consisting of In2O3, ZnO, SiO2 and SnO2.