IMAGE SENSOR AND MANUFACTURING METHOD THEREOF

The present disclosure provides a semiconductor structure, including a substrate including a first material, wherein the first material generates electrical signals from radiation within a first range of wavelengths, an image sensor element including a second material, wherein the second material ge...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	JIANG, SIN-YI, LIAO, YIN-KAI, SZE, JHY-JYI, CHU, YI-SHIN, CHEN, HSIANG-LIN, HUANG, KUANIEH, LIN, JUNG-I
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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