IMAGE SENSOR AND MANUFACTURING METHOD THEREOF
The present disclosure provides a semiconductor structure, including a substrate including a first material, wherein the first material generates electrical signals from radiation within a first range of wavelengths, an image sensor element including a second material, wherein the second material ge...
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| creator | JIANG, SIN-YI LIAO, YIN-KAI SZE, JHY-JYI CHU, YI-SHIN CHEN, HSIANG-LIN HUANG, KUANIEH LIN, JUNG-I |
| description | The present disclosure provides a semiconductor structure, including a substrate including a first material, wherein the first material generates electrical signals from radiation within a first range of wavelengths, an image sensor element including a second material, wherein the second material generates electrical signals from radiation within a second range of wavelengths, the second range is different from first range, a transparent layer proximal to a light receiving surface of the image sensor element, wherein the transparent layer is transparent to radiation within the second range of wavelength, and an interconnect structure connected to a signal transmitting surface of the image sensor element. |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | IMAGE SENSOR AND MANUFACTURING METHOD THEREOF |
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