METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM

According to one aspect of a technique the present disclosure, there is provided a method of manufacturing a semiconductor device, including: (a) processing a substrate accommodated in a process chamber by supplying a process gas to the substrate; and (b) removing deposits adhering to a structure in...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: SHIMIZU, Hideto, NISHIURA, Susumu, INOSHIMA, Kaori
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator SHIMIZU, Hideto
NISHIURA, Susumu
INOSHIMA, Kaori
description According to one aspect of a technique the present disclosure, there is provided a method of manufacturing a semiconductor device, including: (a) processing a substrate accommodated in a process chamber by supplying a process gas to the substrate; and (b) removing deposits adhering to a structure in the process chamber by supplying a cleaning gas to the process chamber, wherein a period T2 from a completion of (b) to a start of an (n+1)th execution of (a) is set to be shorter than a period T1 from a completion of an nth execution of (a) to a start of (b), and wherein n is an integer equal to or greater than 1.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2022262630A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2022262630A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2022262630A13</originalsourceid><addsrcrecordid>eNqNy0EKwjAQheFuXIh6hwG3FmoK3U-TqQ2YpCQZwVUpEleihXoCT24LHsDVg8f3r7OPodg6Ba4Bg5YblJG9ticIZLR0VrGMzoOii5Z0gMB1iB4jQeedpBAWil2H88cB0CqwzuYzsUHP4RWkMx1H8rknVFifCTxJ59USGlKazTZb3YfHlHa_3WT7hqJs8zS--jSNwy0907vnIAohRCWqssBj-Z_6AkkvPlM</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM</title><source>esp@cenet</source><creator>SHIMIZU, Hideto ; NISHIURA, Susumu ; INOSHIMA, Kaori</creator><creatorcontrib>SHIMIZU, Hideto ; NISHIURA, Susumu ; INOSHIMA, Kaori</creatorcontrib><description>According to one aspect of a technique the present disclosure, there is provided a method of manufacturing a semiconductor device, including: (a) processing a substrate accommodated in a process chamber by supplying a process gas to the substrate; and (b) removing deposits adhering to a structure in the process chamber by supplying a cleaning gas to the process chamber, wherein a period T2 from a completion of (b) to a start of an (n+1)th execution of (a) is set to be shorter than a period T1 from a completion of an nth execution of (a) to a start of (b), and wherein n is an integer equal to or greater than 1.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2022</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20220818&amp;DB=EPODOC&amp;CC=US&amp;NR=2022262630A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20220818&amp;DB=EPODOC&amp;CC=US&amp;NR=2022262630A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>SHIMIZU, Hideto</creatorcontrib><creatorcontrib>NISHIURA, Susumu</creatorcontrib><creatorcontrib>INOSHIMA, Kaori</creatorcontrib><title>METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM</title><description>According to one aspect of a technique the present disclosure, there is provided a method of manufacturing a semiconductor device, including: (a) processing a substrate accommodated in a process chamber by supplying a process gas to the substrate; and (b) removing deposits adhering to a structure in the process chamber by supplying a cleaning gas to the process chamber, wherein a period T2 from a completion of (b) to a start of an (n+1)th execution of (a) is set to be shorter than a period T1 from a completion of an nth execution of (a) to a start of (b), and wherein n is an integer equal to or greater than 1.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2022</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNy0EKwjAQheFuXIh6hwG3FmoK3U-TqQ2YpCQZwVUpEleihXoCT24LHsDVg8f3r7OPodg6Ba4Bg5YblJG9ticIZLR0VrGMzoOii5Z0gMB1iB4jQeedpBAWil2H88cB0CqwzuYzsUHP4RWkMx1H8rknVFifCTxJ59USGlKazTZb3YfHlHa_3WT7hqJs8zS--jSNwy0907vnIAohRCWqssBj-Z_6AkkvPlM</recordid><startdate>20220818</startdate><enddate>20220818</enddate><creator>SHIMIZU, Hideto</creator><creator>NISHIURA, Susumu</creator><creator>INOSHIMA, Kaori</creator><scope>EVB</scope></search><sort><creationdate>20220818</creationdate><title>METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM</title><author>SHIMIZU, Hideto ; NISHIURA, Susumu ; INOSHIMA, Kaori</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2022262630A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2022</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>SHIMIZU, Hideto</creatorcontrib><creatorcontrib>NISHIURA, Susumu</creatorcontrib><creatorcontrib>INOSHIMA, Kaori</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>SHIMIZU, Hideto</au><au>NISHIURA, Susumu</au><au>INOSHIMA, Kaori</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM</title><date>2022-08-18</date><risdate>2022</risdate><abstract>According to one aspect of a technique the present disclosure, there is provided a method of manufacturing a semiconductor device, including: (a) processing a substrate accommodated in a process chamber by supplying a process gas to the substrate; and (b) removing deposits adhering to a structure in the process chamber by supplying a cleaning gas to the process chamber, wherein a period T2 from a completion of (b) to a start of an (n+1)th execution of (a) is set to be shorter than a period T1 from a completion of an nth execution of (a) to a start of (b), and wherein n is an integer equal to or greater than 1.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_US2022262630A1
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-30T19%3A22%3A15IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=SHIMIZU,%20Hideto&rft.date=2022-08-18&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2022262630A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true