EPITAXIAL STRUCTURE, LIGHT EMITTING DEVICE, AND METHOD FOR EPITAXIAL STRUCTURE MANUFACTURE

EPITAXIAL STRUCTURE, LIGHT EMITTING DEVICE, AND METHOD FOR EPITAXIAL STRUCTURE MANUFACTURE

An epitaxial structure, a light emitting device, and a method for epitaxial structure manufacture are provided. The epitaxial structure includes a buffer layer and a stress releasing layer that are sequentially formed on a substrate. The stress releasing layer includes a first stress releasing layer...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: YANG, Shun-kuei, ZHOU, Yi
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:An epitaxial structure, a light emitting device, and a method for epitaxial structure manufacture are provided. The epitaxial structure includes a buffer layer and a stress releasing layer that are sequentially formed on a substrate. The stress releasing layer includes a first stress releasing layer. The first stress releasing layer is made of aluminum gallium nitride (AlGaN) in which Al component accounts for 50%-90%.