SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR MEMORY DEVICE

SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR MEMORY DEVICE

A semiconductor memory device, and a method of manufacturing the same, includes a first conductive pattern, a second conductive pattern configured to overlap a first line component of the first conductive pattern and to leave exposed a first pad component of the first conductive pattern. The semicon...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
1. Verfasser: JANG, Jung Shik
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A semiconductor memory device, and a method of manufacturing the same, includes a first conductive pattern, a second conductive pattern configured to overlap a first line component of the first conductive pattern and to leave exposed a first pad component of the first conductive pattern. The semiconductor device also includes an interlayer insulating layer between the first conductive pattern and the second conductive pattern. The semiconductor device further includes a first conductive contact and a first insulating pillar extending from the first pad component of the first conductive pattern in opposite directions.